Transactions of Nanjing University of Aeronautics & Astronautics
Analysis of Drain Modulation for High Voltage GaN Power Amplifier Considering Parasitics
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Abstract:
For high-voltage and high-power Gallium Nitride （GaN） power amplifiers， a drain modulation circuit with rapid rise and fall time is proposed in this paper. To decrease the rise and fall time， the high-side bootstrap drive circuit with an auxiliary discharge switch is proposed. The effect of the parasitics is analyzed based on calculation and the parallel bonding is proposed. The storage capacitance of power supply is calculated quantitatively to provide large pulse current. To ensure safe operation of the power amplifier， the circuit topology with the dead-time control and sequential control is proposed. Finally， a prototype is built to verify the drain modulation circuit design. The experiments prove that the rise time and fall time of the output pulse signal are both less than 100 ns.
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Project Supported:
This work was supported by the Primary Research & Development Plan of Jiangsu Province （Nos.BE2022070， BE2022070-2）.
Clc Number:
TN722.75
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